Auger recombination suppression and band alignment in GaAsBi/GaAs heterostructures
نویسندگان
چکیده
Using a combination of experimental and theoretical techniques we present the dependence of the bandgap Eg and the spin orbit splitting energy so, with Bi concentration in GaAsBi/GaAs samples. We find that the concentration at which so,> Eg occurs at 9%. Both spectroscopic as well as first device results indicate a type I alignment.
منابع مشابه
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